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PD -90813A
IRGMIC50U
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
Features
* * * * * Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses
C
Ultra Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 3.0V
@VGE = 15V, IC = 27A
Description
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Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
TO-259AA
Max.
600 45* 27 220 180 20 200 80 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 10.5 (typical)
Units
V A
V W
C g
*Current is limited by pin diameter
Thermal Resistance
Parameter
RthJC RthJC RthCS RthJA Junction-to-Case-IGBT Junction-to-Case-Diode Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- -- -- 0.21 -- 0.625 1.0 -- 30
C/W
Test Conditions
For footnotes refer to the last page
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1
02/20/02
IRGMIC50U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 --- --- V VGE = 0V, IC = 1.0 mA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.6 --- V/C VGE = 0V, IC = 1.0 mA --- --- 3.0 IC = 27A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage --- --- 3.25 IC = 45A See Fig. 5 V --- --- 2.85 IC = 27A , TJ = 125C VGE(th) Gate Threshold Voltage 3.0 --- 5.5 VCE = VGE, IC = 250 A VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -13 --- mV/C VCE = VGE, IC = 250 A gfe Forward Transconductance 16 --- --- S VCE = 100V, IC = 27A --- --- 250 VGE = 0V, VCE = 480V A ICES Zero Gate Voltage Collector Current --- --- 5000 VGE = 0V, VCE = 480V, TJ = 125C IGES Gate-to-Emitter Leakage Current --- --- 100 nA VGE = 20 VFM Diode Forward Voltage Drop --- --- 1.7 IC = 27A V --- --- 1.5 IC = 27A , TJ = 125C
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- --- --- --- 0.12 1.6 1.7 24 27 180 130 2.7 6.8 Max. Units Conditions 140 IC = 27A 35 nC VCC = 300V See Fig. 8 70 VGE = 15V 50 IC = 27A, VCC = 480V 75 VGE = 15V, RG = 2.35 ns 300 Energy losses include "tail" 210 See Fig. 9, 10, 13 --- mJ --- 2.8 --- TJ = 125C --- C = 27A, VCC = 480V ns --- VGE = 15V, RG = 2.35 --- Energy losses include "tail" mJ See Fig. 11, 13 --- --- nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz ns 100 di/dt = 200A/S, IF = 27A VR 200V 375 nC di/dt = 200A/S, IF = 27A TJ = 125C, VR 200V
Cies Coes Cres T rr Q rr
Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Peak Reverse Recovery Time Diode Peak Reverse Recovery Charge
--- 2900 --- 330 --- 41 --- --- --- ---
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
2
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